Moving Dirac nodes by chemical substitution

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electr...

Full description

Saved in:
Bibliographic Details
Published in:Proceedings of the National Academy of Sciences - PNAS 2021-08, Vol.118 (33), p.1
Main Authors: Nilforoushan, Niloufar, Casula, Michele, Amaricci, Adriano, Caputo, Marco, Caillaux, Jonathan, Khalil, Lama, Papalazarou, Evangelos, Simon, Pascal, Perfetti, Luca, Vobornik, Ivana, Das, Pranab Kumar, Fujii, Jun, Barinov, Alexei, Santos-Cottin, David, Klein, Yannick, Fabrizio, Michele, Gauzzi, Andrea, Marsi, Marino
Format: Article
Language:English
Subjects:
Charge transfer
Doping
Electronic devices
Electronic equipment
Emission spectroscopy
Fermions
Insulators
Metal-insulator transition
Metalloids
Nickel
Phase diagrams
Physical Sciences
Physics
Quantum computing
Spectroscopy
Substitutes
Symmetry
Topological insulators
Transition metals
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved Photo-Emission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, [Formula: see text], through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of [Formula: see text] across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the [Formula: see text] symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making [Formula: see text] a model system to functionalize Dirac materials by varying the strength of electron correlations.
ISSN:0027-8424
1091-6490
DOI:10.1073/pnas.2108617118