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Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor

Abstract As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external...

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Published in:Nature communications 2019-11, Vol.10 (1), p.5301-5301, Article 5301
Main Authors: Hao, Lin, Wang, Zhentao, Yang, Junyi, Meyers, D., Sanchez, Joshua, Fabbris, Gilberto, Choi, Yongseong, Kim, Jong-Woo, Haskel, Daniel, Ryan, Philip J., Barros, Kipton, Chu, Jiun-Haw, Dean, M. P. M., Batista, Cristian D., Liu, Jian
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Language:English
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Summary:Abstract As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO 3 /SrTiO 3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-13271-6