Li(Cd,Mn)P: a new cadmium based diluted ferromagnetic semiconductor with independent spin & charge doping

We report a new diluted ferromagnetic semiconductor Li (Cd,Mn)P, wherein carrier is doped via excess Li while spin is doped by isovalence substitution of Mn into Cd . The extended Cd 4d-orbitals lead to more itinerant characters of Li (Cd,Mn)P than that of analogous Li (Zn,Mn)P. A higher Curie tempe...

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Bibliographic Details
Published in:Scientific reports 2019-05, Vol.9 (1), p.7490-7490, Article 7490
Main Authors: Han, W, Chen, B J, Gu, B, Zhao, G Q, Yu, S, Wang, X C, Liu, Q Q, Deng, Z, Li, W M, Zhao, J F, Cao, L P, Peng, Y, Shen, X, Zhu, X H, Yu, R C, Maekawa, S, Uemura, Y J, Jin, C Q
Format: Article
Language:English
Subjects:
Cadmium
Magnetism
X-ray diffraction
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Summary:We report a new diluted ferromagnetic semiconductor Li (Cd,Mn)P, wherein carrier is doped via excess Li while spin is doped by isovalence substitution of Mn into Cd . The extended Cd 4d-orbitals lead to more itinerant characters of Li (Cd,Mn)P than that of analogous Li (Zn,Mn)P. A higher Curie temperature of 45 K than that for Li (Zn,Mn)P is obtained in Li (Cd,Mn)P polycrystalline samples by Arrott plot technique. The p-type carriers are determined by Hall effect measurements. The first principle calculations and X-ray diffraction measurements indicate that occupation of excess Li is at Cd sites rather than the interstitial site. Consequently holes are doped by excess Li substitution. More interestingly Li (Cd,Mn)P shows a very low coercive field (
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-43754-x