Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films

The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a‐SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characteriz...

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Bibliographic Details
Published in:Journal of biomedical materials research. Part B, Applied biomaterials Applied biomaterials, 2019-07, Vol.107 (5), p.1654-1661
Main Authors: Deku, Felix, Mohammed, Shakil, Joshi‐Imre, Alexandra, Maeng, Jimin, Danda, Vindhya, Gardner, Timothy J., Cogan, Stuart F.
Format: Article
Language:English
Subjects:
air stability
Amorphous materials
Amorphous silicon
amorphous silicon carbide
a‐SiC oxidation
Biomedical materials
Compressive properties
Environmental effects
High temperature
Low temperature
Materials research
Materials science
Mechanical properties
Medical devices
Medical electronics
Medical equipment
Organic chemistry
Oxidation
PECVD
Photovoltaic cells
Plasma enhanced chemical vapor deposition
Residual stress
Silicon
Silicon carbide
Time compression
Water vapor
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Summary:The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a‐SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a‐SiC:H films. Evidence of amorphous silicon carbide films reacting with oxygen and water vapor in the ambient environment are presented. The effect of deposition parameters on oxidation and stress variation in a‐SiC:H film is studied. It is found that the films deposited at low temperature or power are susceptible to oxidation and undergo a notable increase in compressive stress over time. Furthermore, the films deposited at sufficiently high temperature (≥325 C) and power density (≥0.2 W cm−2) do not exhibit pronounced oxidation or temporal stress variation. These results serve as the basis for developing amorphous silicon carbide based dielectric encapsulation for implantable medical devices. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 107B: 1654–1661, 2019.
ISSN:1552-4973
1552-4981
DOI:10.1002/jbm.b.34258