Multilevel information storage using magnetoelastic layer stacks

The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material fo...

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Bibliographic Details
Published in:Scientific reports 2019-02, Vol.9 (1), p.3156-3156, Article 3156
Main Authors: Pattnaik, D P, Beardsley, R P, Love, C, Cavill, S A, Edmonds, K W, Rushforth, A W
Format: Article
Language:English
Subjects:
Anisotropy
Gallium
Information storage
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Summary:The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material for such devices because it possesses biaxial anisotropy and large magnetostriction. Here we experimentally investigate the properties of galfenol/spacer/galfenol structures in which the compositions of the galfenol layers are varied in order to produce different strengths of the magnetic anisotropy and magnetostriction constants. Based upon these layers, we propose and simulate the operation of an information storage device that can operate as an energy efficient multilevel memory cell.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-39775-1