Loading…
Understanding charge transport in lead iodide perovskite thin-film field-effect transistors
Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodi...
Saved in:
Published in: | Science advances 2017-01, Vol.3 (1), p.e1601935-e1601935 |
---|---|
Main Authors: | , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43 |
---|---|
cites | cdi_FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43 |
container_end_page | e1601935 |
container_issue | 1 |
container_start_page | e1601935 |
container_title | Science advances |
container_volume | 3 |
creator | Senanayak, Satyaprasad P Yang, Bingyan Thomas, Tudor H Giesbrecht, Nadja Huang, Wenchao Gann, Eliot Nair, Bhaskaran Goedel, Karl Guha, Suchi Moya, Xavier McNeill, Christopher R Docampo, Pablo Sadhanala, Aditya Friend, Richard H Sirringhaus, Henning |
description | Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI
). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ
) of 0.5 cm
/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA
cations, and thermal vibrations of the lead halide inorganic cages. |
doi_str_mv | 10.1126/sciadv.1601935 |
format | article |
fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5271592</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1863220797</sourcerecordid><originalsourceid>FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43</originalsourceid><addsrcrecordid>eNpVkc1LAzEQxYMoVmqvHmWPXrbmY7PZvQhS_IKCF3vyELLJpI1uk5psC_73rmwt9TQD896bBz-ErgieEkLL26SdMrspKTGpGT9BF5QJnlNeVKdH-whNUvrAGJOiLDmpz9GIVoRVnOML9L7wBmLqlDfOLzO9UnEJWReVT5sQu8z5rAVlMheMM5BtIIZd-nRdr1k5n1vXrjProDU5WAu6G6wudSGmS3RmVZtgsp9jtHh8eJs95_PXp5fZ_TzXBS-7XFPMjMWNgMrYxjDNKNe1EcJqAkw1pgDaEKMFLY3GVY2bwtak1MwIK6gt2BjdDbmbbbMGo8H3JVq5iW6t4rcMysn_F-9Wchl2klNBeE37gJt9QAxfW0idXLukoW2Vh7BNklQloxSLWvTS6SDVMaQUwR7eECx_ocgBitxD6Q3Xx-UO8j8E7AdlOozP</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1863220797</pqid></control><display><type>article</type><title>Understanding charge transport in lead iodide perovskite thin-film field-effect transistors</title><source>American Association for the Advancement of Science</source><source>PubMed Central</source><creator>Senanayak, Satyaprasad P ; Yang, Bingyan ; Thomas, Tudor H ; Giesbrecht, Nadja ; Huang, Wenchao ; Gann, Eliot ; Nair, Bhaskaran ; Goedel, Karl ; Guha, Suchi ; Moya, Xavier ; McNeill, Christopher R ; Docampo, Pablo ; Sadhanala, Aditya ; Friend, Richard H ; Sirringhaus, Henning</creator><creatorcontrib>Senanayak, Satyaprasad P ; Yang, Bingyan ; Thomas, Tudor H ; Giesbrecht, Nadja ; Huang, Wenchao ; Gann, Eliot ; Nair, Bhaskaran ; Goedel, Karl ; Guha, Suchi ; Moya, Xavier ; McNeill, Christopher R ; Docampo, Pablo ; Sadhanala, Aditya ; Friend, Richard H ; Sirringhaus, Henning</creatorcontrib><description>Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI
). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ
) of 0.5 cm
/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA
cations, and thermal vibrations of the lead halide inorganic cages.</description><identifier>ISSN: 2375-2548</identifier><identifier>EISSN: 2375-2548</identifier><identifier>DOI: 10.1126/sciadv.1601935</identifier><identifier>PMID: 28138550</identifier><language>eng</language><publisher>United States: American Association for the Advancement of Science</publisher><subject>Materials Science ; SciAdv r-articles</subject><ispartof>Science advances, 2017-01, Vol.3 (1), p.e1601935-e1601935</ispartof><rights>Copyright © 2017, The Authors 2017 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43</citedby><cites>FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43</cites><orcidid>0000-0002-1183-4129 ; 0000-0001-5221-878X ; 0000-0001-7426-1308</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271592/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271592/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,315,733,786,790,891,2902,2903,27957,27958,53827,53829</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28138550$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Senanayak, Satyaprasad P</creatorcontrib><creatorcontrib>Yang, Bingyan</creatorcontrib><creatorcontrib>Thomas, Tudor H</creatorcontrib><creatorcontrib>Giesbrecht, Nadja</creatorcontrib><creatorcontrib>Huang, Wenchao</creatorcontrib><creatorcontrib>Gann, Eliot</creatorcontrib><creatorcontrib>Nair, Bhaskaran</creatorcontrib><creatorcontrib>Goedel, Karl</creatorcontrib><creatorcontrib>Guha, Suchi</creatorcontrib><creatorcontrib>Moya, Xavier</creatorcontrib><creatorcontrib>McNeill, Christopher R</creatorcontrib><creatorcontrib>Docampo, Pablo</creatorcontrib><creatorcontrib>Sadhanala, Aditya</creatorcontrib><creatorcontrib>Friend, Richard H</creatorcontrib><creatorcontrib>Sirringhaus, Henning</creatorcontrib><title>Understanding charge transport in lead iodide perovskite thin-film field-effect transistors</title><title>Science advances</title><addtitle>Sci Adv</addtitle><description>Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI
). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ
) of 0.5 cm
/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA
cations, and thermal vibrations of the lead halide inorganic cages.</description><subject>Materials Science</subject><subject>SciAdv r-articles</subject><issn>2375-2548</issn><issn>2375-2548</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpVkc1LAzEQxYMoVmqvHmWPXrbmY7PZvQhS_IKCF3vyELLJpI1uk5psC_73rmwt9TQD896bBz-ErgieEkLL26SdMrspKTGpGT9BF5QJnlNeVKdH-whNUvrAGJOiLDmpz9GIVoRVnOML9L7wBmLqlDfOLzO9UnEJWReVT5sQu8z5rAVlMheMM5BtIIZd-nRdr1k5n1vXrjProDU5WAu6G6wudSGmS3RmVZtgsp9jtHh8eJs95_PXp5fZ_TzXBS-7XFPMjMWNgMrYxjDNKNe1EcJqAkw1pgDaEKMFLY3GVY2bwtak1MwIK6gt2BjdDbmbbbMGo8H3JVq5iW6t4rcMysn_F-9Wchl2klNBeE37gJt9QAxfW0idXLukoW2Vh7BNklQloxSLWvTS6SDVMaQUwR7eECx_ocgBitxD6Q3Xx-UO8j8E7AdlOozP</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Senanayak, Satyaprasad P</creator><creator>Yang, Bingyan</creator><creator>Thomas, Tudor H</creator><creator>Giesbrecht, Nadja</creator><creator>Huang, Wenchao</creator><creator>Gann, Eliot</creator><creator>Nair, Bhaskaran</creator><creator>Goedel, Karl</creator><creator>Guha, Suchi</creator><creator>Moya, Xavier</creator><creator>McNeill, Christopher R</creator><creator>Docampo, Pablo</creator><creator>Sadhanala, Aditya</creator><creator>Friend, Richard H</creator><creator>Sirringhaus, Henning</creator><general>American Association for the Advancement of Science</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-1183-4129</orcidid><orcidid>https://orcid.org/0000-0001-5221-878X</orcidid><orcidid>https://orcid.org/0000-0001-7426-1308</orcidid></search><sort><creationdate>20170101</creationdate><title>Understanding charge transport in lead iodide perovskite thin-film field-effect transistors</title><author>Senanayak, Satyaprasad P ; Yang, Bingyan ; Thomas, Tudor H ; Giesbrecht, Nadja ; Huang, Wenchao ; Gann, Eliot ; Nair, Bhaskaran ; Goedel, Karl ; Guha, Suchi ; Moya, Xavier ; McNeill, Christopher R ; Docampo, Pablo ; Sadhanala, Aditya ; Friend, Richard H ; Sirringhaus, Henning</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Materials Science</topic><topic>SciAdv r-articles</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Senanayak, Satyaprasad P</creatorcontrib><creatorcontrib>Yang, Bingyan</creatorcontrib><creatorcontrib>Thomas, Tudor H</creatorcontrib><creatorcontrib>Giesbrecht, Nadja</creatorcontrib><creatorcontrib>Huang, Wenchao</creatorcontrib><creatorcontrib>Gann, Eliot</creatorcontrib><creatorcontrib>Nair, Bhaskaran</creatorcontrib><creatorcontrib>Goedel, Karl</creatorcontrib><creatorcontrib>Guha, Suchi</creatorcontrib><creatorcontrib>Moya, Xavier</creatorcontrib><creatorcontrib>McNeill, Christopher R</creatorcontrib><creatorcontrib>Docampo, Pablo</creatorcontrib><creatorcontrib>Sadhanala, Aditya</creatorcontrib><creatorcontrib>Friend, Richard H</creatorcontrib><creatorcontrib>Sirringhaus, Henning</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Science advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Senanayak, Satyaprasad P</au><au>Yang, Bingyan</au><au>Thomas, Tudor H</au><au>Giesbrecht, Nadja</au><au>Huang, Wenchao</au><au>Gann, Eliot</au><au>Nair, Bhaskaran</au><au>Goedel, Karl</au><au>Guha, Suchi</au><au>Moya, Xavier</au><au>McNeill, Christopher R</au><au>Docampo, Pablo</au><au>Sadhanala, Aditya</au><au>Friend, Richard H</au><au>Sirringhaus, Henning</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Understanding charge transport in lead iodide perovskite thin-film field-effect transistors</atitle><jtitle>Science advances</jtitle><addtitle>Sci Adv</addtitle><date>2017-01-01</date><risdate>2017</risdate><volume>3</volume><issue>1</issue><spage>e1601935</spage><epage>e1601935</epage><pages>e1601935-e1601935</pages><issn>2375-2548</issn><eissn>2375-2548</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><notes>These authors contributed equally to the work.</notes><abstract>Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI
). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ
) of 0.5 cm
/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA
cations, and thermal vibrations of the lead halide inorganic cages.</abstract><cop>United States</cop><pub>American Association for the Advancement of Science</pub><pmid>28138550</pmid><doi>10.1126/sciadv.1601935</doi><orcidid>https://orcid.org/0000-0002-1183-4129</orcidid><orcidid>https://orcid.org/0000-0001-5221-878X</orcidid><orcidid>https://orcid.org/0000-0001-7426-1308</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2375-2548 |
ispartof | Science advances, 2017-01, Vol.3 (1), p.e1601935-e1601935 |
issn | 2375-2548 2375-2548 |
language | eng |
recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5271592 |
source | American Association for the Advancement of Science; PubMed Central |
subjects | Materials Science SciAdv r-articles |
title | Understanding charge transport in lead iodide perovskite thin-film field-effect transistors |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T01%3A39%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Understanding%20charge%20transport%20in%20lead%20iodide%20perovskite%20thin-film%20field-effect%20transistors&rft.jtitle=Science%20advances&rft.au=Senanayak,%20Satyaprasad%20P&rft.date=2017-01-01&rft.volume=3&rft.issue=1&rft.spage=e1601935&rft.epage=e1601935&rft.pages=e1601935-e1601935&rft.issn=2375-2548&rft.eissn=2375-2548&rft_id=info:doi/10.1126/sciadv.1601935&rft_dat=%3Cproquest_pubme%3E1863220797%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c456t-c203df0b7e8dfbd3c325c9d77fc1e3abd4e2b1dc726dc0890b4f916c3d7f72f43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1863220797&rft_id=info:pmid/28138550&rfr_iscdi=true |