Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodi...

Full description

Saved in:
Bibliographic Details
Published in:Science advances 2017-01, Vol.3 (1), p.e1601935-e1601935
Main Authors: Senanayak, Satyaprasad P, Yang, Bingyan, Thomas, Tudor H, Giesbrecht, Nadja, Huang, Wenchao, Gann, Eliot, Nair, Bhaskaran, Goedel, Karl, Guha, Suchi, Moya, Xavier, McNeill, Christopher R, Docampo, Pablo, Sadhanala, Aditya, Friend, Richard H, Sirringhaus, Henning
Format: Article
Language:English
Subjects:
Materials Science
SciAdv r-articles
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI ). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ ) of 0.5 cm /Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA cations, and thermal vibrations of the lead halide inorganic cages.
ISSN:2375-2548
2375-2548
DOI:10.1126/sciadv.1601935