Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure...

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Bibliographic Details
Published in:Scientific reports 2016-04, Vol.6 (1), p.23945-23945, Article 23945
Main Authors: Huang, Yi-Jen, Chao, Shih-Chun, Lien, Der-Hsien, Wen, Cheng-Yen, He, Jr-Hau, Lee, Si-Chen
Format: Article
Language:eng
Subjects:
Computer memory
Electron microscopy
Filaments
Integration
Nanoparticles
Oxides
Oxygen
Rupture
Spectroscopy
Transmission electron microscopy
Voltage
X-ray spectroscopy
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Summary:The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (
ISSN:2045-2322
2045-2322