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Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition

Photoconductivities of monocrystalline vanadium pentoxide (V 2 O 5 ) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,...

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Published in:Nanoscale research letters 2013-10, Vol.8 (1), p.443-443, Article 443
Main Authors: Chen, Ruei-San, Wang, Wen-Chun, Chan, Ching-Hsiang, Hsu, Hung-Pin, Tien, Li-Chia, Chen, Yu-Jyun
Format: Article
Language:English
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Summary:Photoconductivities of monocrystalline vanadium pentoxide (V 2 O 5 ) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W -1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V 2 O 5 NWs is two orders of magnitude higher than that of the V 2 O 5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V 2 O 5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO 2 , TiO 2 , and WO 3 .
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/1556-276X-8-443