Cascadable in-memory computing based on symmetric writing and readout

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here,...

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Bibliographic Details
Published in:Science advances 2022-12, Vol.8 (49), p.eabq6833
Main Authors: Wang, Lizheng, Xiong, Junlin, Cheng, Bin, Dai, Yudi, Wang, Fuyi, Pan, Chen, Cao, Tianjun, Liu, Xiaowei, Wang, Pengfei, Chen, Moyu, Yan, Shengnan, Liu, Zenglin, Xiao, Jingjing, Xu, Xianghan, Wang, Zhenlin, Shi, Youguo, Cheong, Sang-Wook, Zhang, Haijun, Liang, Shi-Jun, Miao, Feng
Format: Article
Language:English
Subjects:
Materials Science
Physical and Materials Sciences
SciAdv r-articles
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Summary:The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a previously unimplemented symmetric write and readout mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe GeTe and WTe . We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved using unconventional charge-to- -spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., -spin-to-charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.
ISSN:2375-2548
2375-2548
DOI:10.1126/sciadv.abq6833