Reentrance of interface superconductivity in a high-Tc cuprate heterostructure

Abstract Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La 2- x Sr x CuO 4 (0...

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Bibliographic Details
Published in:Nature communications 2023-11, Vol.14 (1), p.7290-7290, Article 7290
Main Authors: Shen, J. Y., Shi, C. Y., Pan, Z. M., Ju, L. L., Dong, M. D., Chen, G. F., Zhang, Y. C., Yuan, J. K., Wu, C. J., Xie, Y. W., Wu, J.
Format: Article
Language:English
Subjects:
Carrier density
Charge transfer
Domes
Doping
Heterostructures
High temperature
High temperature superconductors
Localization
Superconductivity
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Summary:Abstract Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La 2- x Sr x CuO 4 (0.45 ≤  x  ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La 2- x Sr x CuO 4 /La 2 CuO 4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x  = 0.8; but it revives at higher doping and fully recovers at x  = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x  = 0.8 and the weak-to-strong localization crossover in the La 2- x Sr x CuO 4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-42903-1