How the Temperature and Composition Govern the Structure and Band Gap of Zr-Based Chalcogenide Perovskites: Insights from ML Accelerated AIMD

The effects of temperature and composition on the structural and electronic properties of chalcogenide perovskite (CP) materials AZrX3 (A = Ba, Sr, Ca; X = S, Se) in the distorted perovskite (DP) phase are investigated using ab initio molecular dynamics (AIMD) accelerated by machine-learned force fi...

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Published in:Inorganic chemistry 2023-08, Vol.62 (31), p.12480-12492
Main Authors: Jaykhedkar, Namrata, Bystrický, Roman, Sýkora, Milan, Bučko, Tomáš
Format: Article
Language:English
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Summary:The effects of temperature and composition on the structural and electronic properties of chalcogenide perovskite (CP) materials AZrX3 (A = Ba, Sr, Ca; X = S, Se) in the distorted perovskite (DP) phase are investigated using ab initio molecular dynamics (AIMD) accelerated by machine-learned force fields. Long-range van der Waals (vdW) interactions, incorporated into the Perdew–Burke–Ernzerhof (PBE) exchange–correlation functional using the DFT-D3 scheme, are found to be crucial for achieving correct predictions of structural parameters. Our calculations show that the distortion of the DP structure with respect to the parent cubic (C) phase, realized in the form of interoctahedral tilting, decreases with the increasing size of the A cations. The tendency for a gradual transformation of the DP-to-C phase with increasing temperature is shown to be strongly composition-dependent. The transformation temperature decreases with the size of cation A and increases with the size of anion X. Thus, within the range of the temperatures considered here (300–1200 K), a complete transformation is observed only for BaZrS3 (∼600 K) and BaZrSe3 (∼900 K). The computed band gap of CPs is shown to monotonically decrease with increasing temperature, and the magnitude of this decrease is found to be proportional to the extent of the thermally induced changes in the internal structure. Diverse factors affecting the magnitude of band gaps of CP materials are analyzed.
ISSN:0020-1669
1520-510X
DOI:10.1021/acs.inorgchem.3c01696