Reductive Thermal Atomic Layer Deposition Process for Gold

In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for t...

Full description

Saved in:
Bibliographic Details
Published in:ACS Materials Au 2023-05, Vol.3 (3), p.206-214
Main Authors: Vihervaara, Anton, Hatanpää, Timo, Nieminen, Heta-Elisa, Mizohata, Kenichiro, Chundak, Mykhailo, Ritala, Mikko
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.
ISSN:2694-2461
2694-2461
DOI:10.1021/acsmaterialsau.2c00075