Growth of highly conducting MoS 2-x N x thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

High-quality growth of MoS N films is realized on single-crystal -Al O substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporat...

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Bibliographic Details
Published in:iScience 2022-03, Vol.25 (3), p.103898
Main Authors: Parmar, Swati, Prajesh, Neetu, Wable, Minal, Choudhary, Ram Janay, Gosavi, Suresh, Boomishankar, Ramamoorthy, Ogale, Satishchandra
Format: Article
Language:English
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Summary:High-quality growth of MoS N films is realized on single-crystal -Al O substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporation of covalently bonded N-doping in MoS lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH shows ∼80% 1T' phase. The transport measurements performed on MoS N films deposited at 300 mTorr NH display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS N film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS . Device architecture, p-type N doping in MoS lattice, favorably increased work-function, multiphasic component of MoS , and increased surface roughness synergistically contribute to superior TENG performance.
ISSN:2589-0042