Ultra-high hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors

Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronics and photoelectronics devices was stagnant in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can incorporate into the NW body to act...

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Bibliographic Details
Published in:Nano letters 2019-08
Main Authors: Sun, Jiamin, Peng, Meng, Zhang, Yushuang, Zhang, Lei, Peng, Rui, Miao, Chengcheng, Liu, Dong, Han, Mingming, Feng, Runfa, Ma, Yandong, Dai, Ying, He, Longbing, Shan, Chongxin, Pan, Anlian, Hu, Weida, Yang, Zai-Xing
Format: Article
Language:English
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Summary:Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronics and photoelectronics devices was stagnant in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can incorporate into the NW body to act as a slight dopant, regulating the electrical property of NW. In this work, we demonstrate the use of Sn as catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. It is attributed to the slight doping of Sn atom from catalyst tip into NW body which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) in comparison with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show high peak hole mobility of 170 cm2 V-1 s-1, high responsivity of 61 A W-1 and smart rise and delay times of 195.1 μs and 380.4 μs, respectively under the illumination of 1550 nm infrared light. All of the results demonstrate the promising applications of the as-prepared Sn-catalyzed GaSb NWs in next-generation electronics and optoelectronics.
ISSN:1530-6992