Solvent-dependent self-assembly of two dimensional layered perovskite (C 6 H 5 CH 2 CH 2 NH 3 ) 2 MCl 4 (M = Cu, Mn) thin films in ambient humidity
Two dimensional layered organic-inorganic halide perovskites offer a wide variety of novel functionality such as solar cell and optoelectronics and magnetism. Self-assembly of these materials using solution process (ex. spin coating) makes crystalline thin films synthesized at ambient environment. H...
Saved in:
Published in: | Scientific reports 2018-03, Vol.8 (1), p.4661 |
---|---|
Main Authors: | , , , , , , , , , , , , |
Format: | Article |
Language: | eng |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Two dimensional layered organic-inorganic halide perovskites offer a wide variety of novel functionality such as solar cell and optoelectronics and magnetism. Self-assembly of these materials using solution process (ex. spin coating) makes crystalline thin films synthesized at ambient environment. However, flexibility of organic layer also poses a structure stability issue in perovskite thin films against environment factors (ex. moisture). In this study, we investigate the effect of solvents and moisture on structure and property in the (C
H
(CH
)
NH
)
(Cu, Mn)Cl
(Cu-PEA, Mn-PEA) perovskite thin films spin-coated on Si wafer using three solvents (H
O, MeOH, MeOH + H
O). A combination of x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS) show that relative humidity (RH) has a profound effect on perovskite thin films during sample synthesis and storage, depending on the kind of solvent used. The ones prepared using water (Cu-PEA:H
O, Mn-PEA:H
O) show quite different behavior from the other cases. According to time-dependent XRD, reversible crystalline-amorphous transition takes place depending on RH in the former cases, whereas the latter cases relatively remain stable. It also turns out from XAS that Mn-PEA thin films prepared with solvents such as MeOH and MeOH + H
O are disordered to the depth of about 4 nm from surface. |
---|---|
ISSN: | 2045-2322 |