Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

In this work, we demonstrate homogeneously distributed In0.3Ga0.7N/GaN quantum disks (QDs), with an average diameter below 10 nm and a high density of 2.1 × 1011 cm−2, embedded in 20 nm tall nanopillars. The scalable top-down fabrication process involves the use of self-assembled ferritin bio-templa...

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Bibliographic Details
Published in:Nanotechnology 2016-10, Vol.27 (42), p.425401-425401
Main Authors: Lai, Yi-Chun, Higo, Akio, Kiba, Takayuki, Thomas, Cedric, Chen, Shula, Lee, Chang Yong, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Katayama, Ryuji, Shojiki, Kanako, Takayama, Junichi, Yamashita, Ichiro, Murayama, Akihiro, Chi, Gou-Chung, Yu, Peichen, Samukawa, Seiji
Format: Article
Language:English
Subjects:
bio-template
InGaN/GaN
neutral beam etch
quantum disks
single quantum well
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Summary:In this work, we demonstrate homogeneously distributed In0.3Ga0.7N/GaN quantum disks (QDs), with an average diameter below 10 nm and a high density of 2.1 × 1011 cm−2, embedded in 20 nm tall nanopillars. The scalable top-down fabrication process involves the use of self-assembled ferritin bio-templates as the etch mask, spin coated on top of a strained In0.3Ga0.7N/GaN single quantum well (SQW) structure, followed by a neutral beam etch (NBE) method. The small dimensions of the iron cores inside ferritin and nearly damage-free process enabled by the NBE jointly contribute to the observation of photoluminescence (PL) from strain-relaxed In0.3Ga0.7N/GaN QDs at 6 K. The large blueshift of the peak wavelength by over 70 nm manifests a strong reduction of the quantum-confined Stark effect (QCSE) within the QD structure, which also agrees well with the theoretical prediction using a 3D Schrödinger equation solver. The current results hence pave the way towards the realization of large-scale III-N quantum structures using the combination of bio-templates and NBE, which is vital for the development of next-generation lighting and communication devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/42/425401