Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma

We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the...

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Bibliographic Details
Published in:ACS nano 2012-03, Vol.6 (3), p.1970-1978
Main Authors: Tang, Yong-Bing, Yin, Li-Chang, Yang, Yang, Bo, Xiang-Hui, Cao, Yu-Lin, Wang, Hong-En, Zhang, Wen-Jun, Bello, Igor, Lee, Shuit-Tong, Cheng, Hui-Ming, Lee, Chun-Sing
Format: Article
Language:English
Subjects:
Atmospheres
Devices
Doping
Energy gaps (solid state)
Graphene
Microwave plasmas
Nanostructure
Segregations
Transport properties
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Summary:We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0–13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 102. Especially, the band gap of graphenes is tuned from 0 to ∼0.54 eV with increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.
ISSN:1936-0851
1936-086X
DOI:10.1021/nn3005262