Charge transport properties of as-grown CZT by traveling heater method

In this present work we have grown Cd 0.9Zn 0.1Te doped with indium by the traveling heater method (THM) technique. Large 2 in diameter CZT ingots of more than 1 kg each were successfully grown by the THM technique in vertical configuration. In order to evaluate our as-grown CZT samples, charge tran...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2011-10, Vol.652 (1), p.162-165
Main Authors: Roy, U.N., Weiler, S., Stein, J., Groza, M., Buliga, V., Burger, A.
Format: Article
Language:English
Subjects:
Accelerators
CdZnTe
Charge transport
Crystal defects
CZT
Detectors
Indium
Internal electric field
Mobility
Residual stress
THM growth
Traveling Heater Method
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Summary:In this present work we have grown Cd 0.9Zn 0.1Te doped with indium by the traveling heater method (THM) technique. Large 2 in diameter CZT ingots of more than 1 kg each were successfully grown by the THM technique in vertical configuration. In order to evaluate our as-grown CZT samples, charge transport characteristics were studied at and below room temperature. The key parameter investigated for as-grown CZT samples was the mobility–trapping time product and its temperature variation. Mobility–trapping time values as high as 9×10 −3 cm 2/V at 30 °C were measured for samples exhibiting resistivities in the 1–2×10 10 Ω cm range. The as-grown samples showed moderately good resolution of 1.5–3.5% at 662 keV when fabricated. The variation of the internal electric field along the depth of the detector was studied for as-grown material to evaluate deformations inside the crystal due to the presence of residual stress or other defects.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2011.01.143