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Toward uniform ZnO nanoparticles embedded in SiO₂ by post Xe irradiation

Uniform ZnO nanoparticles (NPs) have been created by Zn ion implantation and post Xe ion irradiation. Irregularly shaped ZnO NPs with a broad size distribution of 5–30nm have been tailored to spherical shape with a narrow size distribution of 3–5nm. The optical properties of the ZnO NPs have been mo...

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Bibliographic Details
Published in:Materials letters 2011-10, Vol.65 (19-20), p.2966-2968
Main Authors: Shen, Y.Y, Zhang, X.D, Zhang, D.C, Xue, Y.H, Zhang, L.H, Liu, C.L
Format: Article
Language:English
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Summary:Uniform ZnO nanoparticles (NPs) have been created by Zn ion implantation and post Xe ion irradiation. Irregularly shaped ZnO NPs with a broad size distribution of 5–30nm have been tailored to spherical shape with a narrow size distribution of 3–5nm. The optical properties of the ZnO NPs have been modified clearly after Xe ion irradiation. Furthermore, Rutherford back-scattering spectrometry results give the evidence that Xe irradiation can cause the diffusion and reprecipitation of the Zn NPs. The present study shows the interest of using heavy ion irradiation to tailor size and shape distribution of the embedded NPs in SiO₂.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2011.06.066