Topological Insulator Quantum Dot with Tunable Barriers

Thin (6–7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2–4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade w...

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Bibliographic Details
Published in:Nano letters 2012-01, Vol.12 (1), p.469-472
Main Authors: Cho, Sungjae, Kim, Dohun, Syers, Paul, Butch, Nicholas P, Paglione, Johnpierre, Fuhrer, Michael S
Format: Article
Language:English
Subjects:
Applied sciences
Barriers
Blocking
Charging
Cross-disciplinary physics: materials science
rheology
Electric Conductivity
Electric potential
Electromagnetic Fields
Electronics
Exact sciences and technology
Excitation spectra
Insulators
Materials science
Materials Testing
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum Dots
Qunatum dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Thin films
Topology
Voltage
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Summary:Thin (6–7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2–4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl203851g