Magnetic domain reversal behavior for various patterned hole depths

We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2005-02, Vol.41 (2), p.950-952
Main Authors: Te-Ho Wu, Ye, L.X., Chun-Shin Yeh, Huang, Y.W., Bohr-Ran Huang, Wu, J.C.
Format: Article
Language:English
Subjects:
Arrays
Boundaries
Coercivity
Cross-disciplinary physics: materials science
rheology
Electron beams
Etching
Exact sciences and technology
Film thickness
hole arrays
Magnetic anisotropy
magnetic domain
Magnetic domains
Magnetic field measurement
Magnetic fields
Magnetic films
Magnetic force microscopy
Magnetism
Materials science
Microscopes
Other topics in materials science
patterned material
Perpendicular magnetic anisotropy
Perpendicular magnetic recording
Physics
Pinning
pinning effect
Resists
Thin films
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Summary:We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field nears the coercivity. We also found that, when the hole depth is shallower, the magnetic anisotropy becomes more profound for the domain pinning effect. Moreover, the magnetic domain pinning effect due to the hole barrier becomes significantly practical as the hole depth approaches the film thickness.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2004.842132