Near-field scanning optical microscopy of quantum dot broad area laser diodes

Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.195-199
Main Authors: JUNG, S. I, YEO, H. Y, YUN, I, LEEM, J. Y, HAN, I. K, KIM, J. S, LEE, J. I
Format: Article
Language:English
Subjects:
Alloys
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Indium arsenides
Laser diodes
Lasers
Materials
Materials science
Microscopes
Nanoscale materials and structures: fabrication and characterization
Optical microscopy
Optics
Physics
Quantum dots
Scanning
Semiconductor lasers
laser diodes
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Description
Summary:Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9202-z