Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

In this paper, we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier M...

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Bibliographic Details
Published in:Solid-state electronics 2010-02, Vol.54 (2), p.185-190
Main Authors: Urban, C., Sandow, C., Zhao, Q.-T., Knoch, J., Lenk, S., Mantl, S.
Format: Article
Language:English
Subjects:
Barriers
Devices
Dopant segregation
Dopants
Drains
Inverse
Metal source/drain
MOSFETs
NiSi
Schottky barrier MOSFET
Segregations
Silicidation
Source/drain resistance
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Summary:In this paper, we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier MOSFETs with boron segregation and n-type Schottky barrier MOSFETs with arsenic segregation show substantially improved electrical characteristics when compared to devices without dopant segregation. An inverse subthreshold slope close to the thermal limit and on-currents which are one order of magnitude higher than for Schottky barrier MOSFETs without dopant segregation are observed for devices with dopant segregation. A statistical analysis of Schottky barrier MOSFETs with dopant segregation reveals a strong dependence on the doping concentration of the electrical performance of both, p- and n-type devices. Source and drain resistances of 560Ωμm are extracted for n-type devices on 30nm thick silicon-on-insulator.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.12.017