Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

This paper details the processing steps used to fabricate front and back side processed, unintentionally doped bulk GaAs Schottky detectors and presents the results of current–voltage ( I– V) and X-ray characterization of the detectors. GaAs detectors with large enough thickness and low enough dopin...

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Bibliographic Details
Published in:Solid-state electronics 2010, Vol.54 (1), p.1-3
Main Authors: Semendy, F., Singh, S., Litz, M., Wijewarnasuriya, P., Blaine, K., Dhar, N.
Format: Article
Language:English
Subjects:
Applied sciences
Breakdown
Detectors
Electric potential
Electronics
Exact sciences and technology
Gallium arsenide
Gallium arsenides
General equipment and techniques
Gold
Imaging devices
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Interfaces
I– V characteristics
Microelectronic fabrication (materials and surfaces technology)
Physics
Schottky detectors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
SI GaAs
Voltage
X-ray detection
X-rays
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Summary:This paper details the processing steps used to fabricate front and back side processed, unintentionally doped bulk GaAs Schottky detectors and presents the results of current–voltage ( I– V) and X-ray characterization of the detectors. GaAs detectors with large enough thickness and low enough doping could be used for X-ray imaging, especially for medical applications. For this experiment, we fabricated GaAs Schottky wafers using front and back side photolithographic processing with Ti/Au for the Schottky contacts and Ge/Au/Ni/Au for the ohmic contacts. We then tested a number of 2 mm 2 detectors. The breakdown voltage reached 600–800 V reverse bias in these GaAs Schottky detectors and the dark current was found to be between 2 and 90 nA. These detectors were also characterized using 150 keV, 3 mA X-ray radiation and the response indicated more than a hundredfold increase in photocurrent. These detectors with their high breakdown voltage will enhance the charge collection efficiency. In addition, thicker samples with high breakdown voltage can be used, which will provide even higher stopping power, thus making these detectors suitable for high energy X-ray detection.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.09.011