InGaAs-based high-performance p-i-n photodiodes

We have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 t...

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Bibliographic Details
Published in:IEEE photonics technology letters 2002-03, Vol.14 (3), p.366-368
Main Authors: Kimukin, I., Biyikli, N., Butun, B., Aytur, O., Unlu, S.M., Ozbay, E.
Format: Article
Language:English
Subjects:
Bandwidth
Bias
Computing time
Deconvolution
Devices
Etching
High speed optical techniques
Microwave devices
Photoconductivity
Photocurrent
Photodetectors
Photodiodes
Photoelectric effect
PIN photodiodes
Quantum mechanics
Resonance
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Summary:We have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.986815