Scanning Tunneling Microscope Observations of Non-AB Stacking of Graphene on Ni Films

Microscopic features of graphene segregated on Ni films prior to chemical transfer--including atomic structures of monolayers and bilayers, Moire patterns due to non-AB stacking, as well as wrinkles and ripples caused by strain effects-have been characterized in detail by high-resolution scanning tu...

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Bibliographic Details
Published in:Nano research 2011-07, Vol.4 (7), p.712-721
Main Authors: Zhao, Ruiqi, Zhang, Yanfeng, Gao, Teng, Gao, Yabo, Liu, Nan, Fu, Lei, Liu, Zhongfan
Format: Article
Language:English
Subjects:
Annealing
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Chemistry
Chemistry and Materials Science
Condensed Matter Physics
Electronics
Electrons
Graphene
Materials Science
Microscopy
Moire patterns
Morphology
Nanostructure
Nanotechnology
Nickel
Research Article
Ripples
Scanning tunneling microscopy
Single crystals
Stacking
原子结构
堆叠
扫描隧道显微镜
显微分离
显微镜观察
石墨
镍薄膜
高分辨率
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Summary:Microscopic features of graphene segregated on Ni films prior to chemical transfer--including atomic structures of monolayers and bilayers, Moire patterns due to non-AB stacking, as well as wrinkles and ripples caused by strain effects-have been characterized in detail by high-resolution scanning tunneling microscopy （STM）. We found that the stacking geometry of the bilayer graphene usually deviates from the traditional Bernal stacking （or so-called AB stacking）, resulting in the formation of a variety of Moir6 patterns. The relative rotations inside the bilayer were then qualitatively deduced from the relationship between Moir6 patterns and carbon lattices. Moreover, we found that typical defects such as wrinkles and ripples tend to evolve around multi-step boundaries of Ni, thus reflecting strong perturbations from substrate corrugations. These investigations of the morphology and the mechanism of formation of wrinkles and ripples are fundamental topics in graphene research. This work is expected to contribute to the exploration of electronic and transport properties of wrinkles and ripples.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-011-0127-8