Composition and structure of hafnia films on silicon

Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9–2.0) and SiO 2 (1.46)...

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Bibliographic Details
Published in:Inorganic materials 2008-09, Vol.44 (9), p.965-970
Main Authors: Smirnova, T. P., Kaichev, V. V., Yakovkina, L. V., Kosyakov, V. I., Beloshapkin, S. A., Kuznetsov, F. A., Lebedev, M. S., Gritsenko, V. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Hafnia
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
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Summary:Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9–2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2 -HfO 2 -Hf system shows that Si is in equilibrium with Si/HfO 2 − y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4 /HfO 2 − y .
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168508090124