Electrical and Interfacial Characterization of Atomic Layer Deposited High- K Gate Dielectrics on GaAs for Advanced CMOS Devices

In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al@@d2@O@@d3@, HfO@@d2@, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al@@d...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1831-1837
Main Authors: Dalapati, G K, Tong, Yi, Loh, Wei-Yip, Mun, Hoe Keat, Cho, Byung Jin
Format: Article
Language:English
Online Access:Get full text
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Summary:In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al@@d2@O@@d3@, HfO@@d2@, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al@@d2@O@@d3@ or HfO@@d2@ on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500degC. It is found that PDA, at above 500degC, causes a significant amount of Ga and As out-diffusion into the high-k dielectric, which degrades the interface, as well as bulk high-k properties.
ISSN:0018-9383
DOI:10.1109/TED.2007.901261