Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide

We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a deep-ridge passive waveguide by means of butt-joint selective area growth. Lossless operation with a high extinction ratio of 32 dB and clear eye o...

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Bibliographic Details
Published in:IEEE photonics technology letters 2003-05, Vol.15 (5), p.679-681
Main Authors: Asaka, K., Suzaki, Y., Kawaguchi, Y., Kondo, S., Noguchi, Y., Okamoto, H., Iga, R., Oku, S.
Format: Article
Language:English
Subjects:
Arrayed waveguide gratings
Devices
Diffraction gratings
Electroabsorption modulators
Extinction ratio
Lossless
Noise levels
Optical devices
Optical losses
Optical modulation
Optical waveguides
Photonic integrated circuits
Photonics
Semiconductor optical amplifiers
Semiconductor waveguides
Stimulated emission
Waveguides
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Summary:We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a deep-ridge passive waveguide by means of butt-joint selective area growth. Lossless operation with a high extinction ratio of 32 dB and clear eye opening at 10 Gb/s are successfully achieved. We confirm that the optical injection should be from the SOA side of the device to obtain a wide error-free range of incident optical power from -20 to +10 dBm. Our device could lead to richly functional photonic integrated circuits comprising arrayed waveguide gratings (AWGs) for advanced wavelength-division-multiplexing networks, since the passive waveguide has the same structure as AWGs.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2003.809947