High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100–500nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP (super high aspect ratio process) [1] optimize...

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Bibliographic Details
Published in:Microelectronic engineering 2011-08, Vol.88 (8), p.2556-2558
Main Authors: Hermersdorf, M., Hibert, C., Grogg, D., Ionescu, A.M.
Format: Article
Language:English
Subjects:
Applied sciences
Aspect ratio
Cross-disciplinary physics: materials science
rheology
DRIE
Electronics
Etching
Exact sciences and technology
High aspect ratio
Materials science
Micro- and nanoelectromechanical devices (mems/nems)
Microelectronic fabrication (materials and surfaces technology)
Physics
Radio frequencies
Reactive ion etching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
SOI
Sub-micron trenches
Surface treatments
Trenches
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Summary:This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100–500nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP (super high aspect ratio process) [1] optimized Bosch process with low frequency (LF) biased substrate. For comparison, the same trenches were etched with reactive ion etching (RIE) based on chlorine chemistry and with the radio frequency (RF) biased substrate DRIE SHARP optimized Bosch process. The comparison clearly illustrates the superiority of the LF biased substrate Bosch process. Aspect ratios of over 20 were achieved with nearly 90° angled and smooth sidewalls. It was found out that the scalloping effect got reduced by decreasing trench width. 200nm and 150nm comb-trenches with 200nm and 150nm spacing respectively and with an aspect ratio of over 20 were fabricated to demonstrate the controllability and repeatability of the trenches fabrication.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.02.030