Ballistic transport in high electron mobility transistors

A general ballistic FET model that was previously used for ballistic MOSFETs is applied to ballistic high electron mobility transistors (HEMTs), and the results are compared with experimental data for a sub-50 nm InAlAs-InGaAs HEMT. The results show that nanoscale HEMTs can be modeled as an intrinsi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-07, Vol.50 (7), p.1604-1609
Main Authors: Jing Wang, Lundstrom, M.
Format: Article
Language:English
Subjects:
Aluminum compounds
Charge carrier mobility
Drains
Gallium compounds
High electron mobility transistors
Indium compounds
MODFETs
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
Semiconductor device modeling
Semiconductor devices
Transport
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Summary:A general ballistic FET model that was previously used for ballistic MOSFETs is applied to ballistic high electron mobility transistors (HEMTs), and the results are compared with experimental data for a sub-50 nm InAlAs-InGaAs HEMT. The results show that nanoscale HEMTs can be modeled as an intrinsic ballistic transistor with extrinsic source/drain series resistances. We also examine the "ballistic mobility" concept, a technique proposed for extending the drift-diffusion model to the quasi-ballistic regime. Comparison with a rigorous ballistic model shows that under low drain bias the ballistic mobility concept, although nonphysical, can be used to understand the experimental phenomena related to quasi-ballistic transport, such as the degradation of the apparent carrier mobility in short channel devices. We also point out that the ballistic mobility concept loses validity under high drain bias. The conclusions of this paper should be also applicable to other nanoscale transistors with high carrier mobility, such as carbon nanotube FETs and strained silicon MOSFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.814980