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Pattern transfer and post processing of complex nanostructures formed by e-beam exposure in PMMA

We present results on various post processing techniques to create complex 3-dimensional nanostructures with enhanced capabilities. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular shape is obtained by the energy density dis...

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Bibliographic Details
Published in:Microelectronic engineering 2011-08, Vol.88 (8), p.2533-2536
Main Authors: Gautsch, S., de Rooij, N.F.
Format: Article
Language:English
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Summary:We present results on various post processing techniques to create complex 3-dimensional nanostructures with enhanced capabilities. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular shape is obtained by the energy density distribution of incident and backscattered electrons of e-beam exposure and reflects the dual behavior of PMMA as positive and negative resist. Employing only 1 lithographic step and several batch processing techniques, we ensure that the creation of the complex shapes can be obtained in a reproducible manner without subsequent realignment steps. We propose several applications for these structures, covering a wide variety of research areas.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.02.012