A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency syn...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of solid-state circuits 2006-12, Vol.41 (12), p.2795-2806
Main Authors: Babakhani, A., Xiang Guan, Komijani, A., Natarajan, A., Hajimiri, A.
Format: Article
Language:English
Subjects:
Amplifiers
Antennas
Applied sciences
BiCMOS
Circuit properties
Design. Technologies. Operation analysis. Testing
dielectric lens
Dipole antennas
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency synthesizers
Gain
Integrated circuits
Low-noise amplifiers
Noise
Noise figure
Noise levels
on-chip dipole antennas
Oscillators, resonators, synthetizers
phased-array
Receivers
Receiving antennas
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
silicon germanium
Silicon substrates
surface wave
Transceivers
Voltage-controlled oscillators
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2006.884811