ToF–SIMS and XPS study of ion implanted 248 nm deep ultraviolet (DUV) photoresist

Arsenic implanted 248 nm DUV photoresist films were characterized by ToF–SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2011-05, Vol.88 (5), p.677-679
Main Authors: Franquet, A., Tsvetanova, D., Conard, T., Vos, R., Vereecke, G., Mertens, P.W., Heyns, M.M., Vandervorst, W.
Format: Article
Language:English
Subjects:
Aging (artificial)
Applied sciences
Composition effects
Cross-disciplinary physics: materials science
rheology
Crusts
Electronics
Energy of formation
Exact sciences and technology
Implants
Materials science
Microelectronic fabrication (materials and surfaces technology)
Microelectronics
Photoresists
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid solution, precipitation, and dispersion hardening
aging
Treatment of materials and its effects on microstructure and properties
X-ray photoelectron spectroscopy
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Arsenic implanted 248 nm DUV photoresist films were characterized by ToF–SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by various implant doses and implant energies were investigated. Emphasis was put on the effect of the aging time on the composition of the ion implanted photoresist.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.06.020