Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells

The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs), grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) and photoreflectance (PR) spectroscopies. The optical transitions energy observed in the PL and PR spectra of GaAsSbN/GaAs QWs show a...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2011-08, Vol.23 (32), p.325801-8
Main Authors: LOURENCO, S. A, DA SILVA, M. A. T, DIAS, I. F. L, DUARTE, J. L, HARMAND, J. C
Format: Article
Language:English
Subjects:
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Energy use
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Optical transition
Physics
Quantum wells
Spectra
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Summary:The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs), grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) and photoreflectance (PR) spectroscopies. The optical transitions energy observed in the PL and PR spectra of GaAsSbN/GaAs QWs show a strong decrease with a small increase in the N composition. These effects are explained through the interaction between the conduction band and a narrow resonant band formed by nitrogen states in the GaAsSbN alloy. The temperature dependence of ground-state energy of strained-layer QWs is analyzed using the Bose-Einstein relation in the temperature range from 9 to 295 K. The parameters that describe the temperature variations of the ground-state energies are evaluated and discussed.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/23/32/325801