Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic...

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Bibliographic Details
Published in:IEEE electron device letters 2011-05, Vol.32 (5), p.599-601
Main Authors: Moran, D A J, Fox, O J L, McLelland, H, Russell, S, May, P W
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Diamond
Diamond-like carbon
Direct current
Drains
Electronics
Exact sciences and technology
FETs
field-effect transistor (FET)
Gates
hydrogen terminated
Logic gates
Ohmic contacts
Performance evaluation
Reduction
Resistance
scaling
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
Transistors
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Summary:We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum I on / I off ratio of ~ 1.5 × 10 4 is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2114871