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Fabrication of AC-coupled double-sided silicon strip sensor
The AC-coupled double-sided silicon microstrip sensors are designed and 14 masks are used to produce prototype strip sensors. The biasing resistors are made of p-doped polysilicons and the coupling capacitors are built by separating implanted strips and readout strips by a thin oxide layer. The p-st...
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Published in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-11, Vol.623 (1), p.213-215 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The AC-coupled double-sided silicon microstrip sensors are designed and 14 masks are used to produce prototype strip sensors. The biasing resistors are made of p-doped polysilicons and the coupling capacitors are built by separating implanted strips and readout strips by a thin oxide layer. The p-stops in the atoll patterns are introduced to disrupt an electron accumulation layer at the Si–SiO2 interface on the ohmic side. The junction side has a double metal structure using two metal layers separated from each other by a thick insulator layer. The strip sensors are fabricated on a 5-in., high resistivity, 〈100〉-orientation, and 380μm thick n-type double-sided polished silicon wafer. The prototype sensor with an area of 2.8×2.8cm2 consists of 256(512) readout channels with a strip pitch of 100(50)μm. The leakage currents and the bulk capacitances as a function of the reverse bias voltage are measured to understand the fabrication process of the prototype sensors. The signal to noise ratios are measured by using a 90Sr radioactive source in order to evaluate performance of the sensors. The design of the AC-coupled double-sided silicon strip sensor and its various components are described, and measurements of the electric characteristics and the signal to noise ratio are presented. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2010.02.199 |