Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering

Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In 2 O 3 –10% SnO 2 in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experime...

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Bibliographic Details
Published in:Journal of materials science 2010-08, Vol.45 (15), p.4224-4228
Main Authors: Rasia, L. A., Mansano, R. D., Damiani, L. R., Viana, C. E.
Format: Article
Language:English
Subjects:
Beam theory (structures)
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Coefficients
Crystallography and Scattering Methods
Deposition
Electric properties
Gages
Gauges
Indium
Indium oxides
Indium tin oxide
Indium tin oxides
Magnetron sputtering
Materials Science
Polymer Sciences
Room temperature
Silicon substrates
Solid Mechanics
Strain gauges
Thin films
Tin dioxide
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Summary:Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In 2 O 3 –10% SnO 2 in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (π l ) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increases which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-010-4517-1