Impurity segregation in directional solidified multi-crystalline silicon

In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental results. A solute transport model has been established to predict the final segregation pattern of impurities in the ingot. The segregation is...

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Bibliographic Details
Published in:Journal of crystal growth 2010-10, Vol.312 (21), p.3091-3095
Main Authors: Bellmann, M.P., Meese, E.A., Arnberg, L.
Format: Article
Language:English
Subjects:
A1. Convection
A1. Impurities
A1. Numerical simulation
A1. Segregation
A2. Growth from melt
Applied sciences
B3. Solar cell
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Energy
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Growth from melts
zone melting and refining
Impurities
Ingots
Materials science
Mathematical models
Methods of crystal growth
physics of crystal growth
Natural energy
Photovoltaic conversion
Physics
Precipitates
Precipitation
Segregations
Silicon
Silicon carbide
Solar cells. Photoelectrochemical cells
Solar energy
Solubility, segregation, and mixing
phase separation
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Summary:In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental results. A solute transport model has been established to predict the final segregation pattern of impurities in the ingot. The segregation is analyzed experimentally on the basis of Fourier transform infrared (FTIR) spectroscopy and glow-discharge mass spectrometry (GDMS). Precipitates were located by IR-transmission microscopy (IRM). Qualitative agreement between simulation and experiment is found. It is demonstrated how the flow pattern can influence the final solute distribution. The simulation also shows that the solubility limit of carbon and nitrogen is reached locally in the ingot and SiC and Si 3N 4 precipitates are likely to form.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.07.052