Synthesis of thermoresponsive poly( N-isopropylacrylamide) brush on silicon wafer surface via atom transfer radical polymerization

Thermoresponsive poly( N-isopropylacrylamide) [poly(NIPAM)] brush on silicon wafer surface was prepared by combining the self-assembled monolayer of initiator and atom transfer radical polymerization (ATRP). The resulting polymer brush was characterized by in situ reflectance Fourier transform infra...

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Bibliographic Details
Published in:Thin solid films 2010-08, Vol.518 (21), p.5950-5954
Main Authors: Turan, Eylem, Demirci, Serkan, Caykara, Tuncer
Format: Article
Language:English
Subjects:
Applied sciences
Atom transfer radical polymerization
Brushes
Collapse
Condensed matter: structure, mechanical and thermal properties
Contact angle
Density
Exact sciences and technology
Heating
Organic polymers
Physicochemistry of polymers
Physics
Poly( N-isopropylacrylamide)
Polymer brush
Polymerization
Properties and characterization
Radicals
Silicon
Solid-fluid interfaces
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Wafers
Wetting
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Summary:Thermoresponsive poly( N-isopropylacrylamide) [poly(NIPAM)] brush on silicon wafer surface was prepared by combining the self-assembled monolayer of initiator and atom transfer radical polymerization (ATRP). The resulting polymer brush was characterized by in situ reflectance Fourier transform infrared spectroscopy, atomic force microscopy and ellipsometry techniques. Gel permeation chromatography determination of the number-average molecular weight and polydispersity index of the brush detached from the silicon wafer surface suggested that the surface-initiated ATRP method can provide relatively homogeneous polymer brush. Contact angle measurements exhibited a two-stage increase upon heating over the board temperature range 25–45 °C, which is in contrast to the fact that free poly(NIPAM) homopolymer in aqueous solution exhibits a phase transition at ca. 34 °C within a narrow temperature range. The first de-wetting transition takes place at 27 °C, which can be tentatively attributed to the n-cluster induced collapse of the inner region of poly(NIPAM) brush close to the silicon surface; the second de-wetting transition occurs at 38 °C, which can be attributed to the outer region of poly(NIPAM) brush, possessing much lower chain density compared to that of the inner part.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.05.103