Distributed Bragg reflector enhancement of electroluminescence from a silicon nanocrystal light emitting device

We demonstrate distributed Bragg reflector (DBR) enhanced electroluminescence from a silicon nanocrystal-based light emitting device. An a-Si/SiO 2 superlattice containing silicon nanocrystals serves as the intrinsic layer in an n–i–n device that is embedded in a DBR cavity consisting of alternating...

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Bibliographic Details
Published in:Thin solid films 2010-05, Vol.518 (15), p.4394-4398
Main Authors: Creazzo, Tim, Redding, Brandon, Marchena, Elton, Hao, Ruiying, Murakowski, Janusz, Shi, Shouyuan, Prather, Dennis W.
Format: Article
Language:English
Subjects:
Applied sciences
Bragg reflectors
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Devices
Distributed Bragg reflector
Electroluminescence
Electronics
Exact sciences and technology
Holes
Light emitting
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocrystals
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optoelectronic devices
Other luminescence and radiative recombination
Other topics in nanoscale materials and structures
Photoluminescence
Physics
Resonant cavity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Si/SiO 2 superlattices
Silicon
Silicon dioxide
Silicon nanocrystals
Superlattices
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Summary:We demonstrate distributed Bragg reflector (DBR) enhanced electroluminescence from a silicon nanocrystal-based light emitting device. An a-Si/SiO 2 superlattice containing silicon nanocrystals serves as the intrinsic layer in an n–i–n device that is embedded in a DBR cavity consisting of alternating layers of silicon and silicon dioxide. The entire structure, including DBR, superlattice and contact layers, is deposited by plasma-enhanced chemical vapor deposition. The photoluminescence, electroluminescence (EL) and optical output power are measured and compared to a reference device. The DBR is found to enhance the peak EL intensity by a factor of 25 and the external quantum and power conversion efficiencies by a factor of 2.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.02.023