On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene

We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking...

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Bibliographic Details
Published in:	Nano letters 2010-10, Vol.10 (10), p.3868-3872
Main Authors:	Ni, Z. H., Ponomarenko, L. A., Nair, R. R., Yang, R., Anissimova, S., Grigorieva, I. V., Schedin, F., Blake, P., Shen, Z. X., Hill, E. H., Novoselov, K. S., Geim, A. K.
Format:	Article
Language:	eng
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Physics Specific materials
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Summary:	We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate.
ISSN:	1530-6984 1530-6992