High Current, Low Voltage Carbon Nanotube Enabled Vertical Organic Field Effect Transistors

State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio >105 for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm2. The architecture enab...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2010-09, Vol.10 (9), p.3467-3472
Main Authors: McCarthy, Mitchell A, Liu, Bo, Rinzler, Andrew G
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanoscale pattern formation
Nanotubes
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio >105 for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm2. The architecture enables submicrometer channel lengths while avoiding high-resolution patterning. The ability to drive high currents and inexpensive fabrication may provide the solution for the so-called OLED backplane problem.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl101589x