Carbon nanotube junctions obtained by pulsed liquid injection chemical vapour deposition

The effect of substrate surface roughness on the synthesis of carbon nanotube (CNT) junctions is studied. CNTs were obtained by a pulsed liquid injection chemical vapour deposition system (PLICVD) and grown on quartz substrates with different roughnesses. Nickel particles were used as catalyst and a...

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Bibliographic Details
Published in:Diamond and related materials 2010-07, Vol.19 (7), p.1052-1057
Main Authors: Garcia, A.G., Duarte Correa, M.J., Perez Robles, J.F., Romero, A.H., Velasco-Santos, C., Apatiga, L.M.
Format: Article
Language:English
Subjects:
Carbon nanotubes
Catalysis
Catalysts: preparations and properties
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemistry
CNT growth mechanism
CNT junctions
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
General and physical chemistry
Liquid injection
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanotubes
Other topics in nanoscale materials and structures
Physics
PLICVD
Quartz
Roughness
Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry
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Summary:The effect of substrate surface roughness on the synthesis of carbon nanotube (CNT) junctions is studied. CNTs were obtained by a pulsed liquid injection chemical vapour deposition system (PLICVD) and grown on quartz substrates with different roughnesses. Nickel particles were used as catalyst and acetone as the carbon precursor. Results shown that CNTs growth depend strongly on the substrate irregularity. When roughness is present, the presence of CNT junctions are increased. On the quartz surface, without any modification of roughness, CNTs are not obtained. Thus, a growth mechanism for CNT junctions, based on the substrate roughness is suggested. This method represents an important alternative to produce CNTs for applying them in nanoelectronic devices.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2010.02.034