Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD) sub(3) (OD identical with octanedionate)

Ruthenium thin films were deposited with a liquid precursor in a warm wall reactor and direct liquid injection. Chemical vapor deposition was used to fabricate the ruthenium films on silicon substrates. By optimizing the deposition temperature, reactor pressure pure ruthenium films were obtained.

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-09, Vol.18 (5), p.2400-2403
Main Authors: Lee, Jung-Hyun, Kim, Joo-Young, Rhee, Shi-Woo, Yang, DooYoung, Kim, Dong-Hyun, Yang, Cheol-Hoon, Han, Young-Ki, Hwang, Chul-Ju
Format: Article
Language:English
Subjects:
Metallorganic chemical vapor deposition
Ruthenium
Semiconducting silicon
Surface roughness
Thin films
Online Access:Get full text
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Description
Summary:Ruthenium thin films were deposited with a liquid precursor in a warm wall reactor and direct liquid injection. Chemical vapor deposition was used to fabricate the ruthenium films on silicon substrates. By optimizing the deposition temperature, reactor pressure pure ruthenium films were obtained.
ISSN:0734-2101