Seedless Growth of Free-Standing Copper Nanowires by Chemical Vapor Deposition

Free-standing copper nanowires were synthesized by a chemical vapor deposition process at low substrate temperatures using Cu(etac)[P(OEt)3]2 as a precursor. The process requires neither templates nor catalysts to produce copper nanowires of 70−100 nm in diameter, which exhibited high purity and cry...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the American Chemical Society 2004-05, Vol.126 (20), p.6248-6249
Main Authors: Choi, Hyungsoo, Park, Sung-Ho
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Free-standing copper nanowires were synthesized by a chemical vapor deposition process at low substrate temperatures using Cu(etac)[P(OEt)3]2 as a precursor. The process requires neither templates nor catalysts to produce copper nanowires of 70−100 nm in diameter, which exhibited high purity and crystallinity with [111] orientation. The grain structures of the films deposited from a series of Cu(I) alkyl 3-oxobutanoate complexes indicated that the high precursor stability was responsible for the columnar growth of the grains, which was evolved to the nanowires eventually.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja049217+