Pushing the boundaries of local oxidation nanolithography: Short timescales and high speeds

Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied...

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Bibliographic Details
Published in:Ultramicroscopy 2008-09, Vol.108 (10), p.1120-1123
Main Authors: Vicary, J.A., Miles, M.J.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Local oxidation
Nanofabrication
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Summary:Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied on timescales as low as 500 ns to create single oxide nanostructures with dimensions of 0.6×15 nm 2. Furthermore, we report on preliminary experiments demonstrating that local oxidation can also be achieved with relative tip-sample speeds in excess of 2 cm s −1 in order to pattern larger areas. This was realised using a high-speed scan stage based on a quartz crystal resonator operating at 20 kHz.
ISSN:0304-3991
1879-2723
DOI:10.1016/j.ultramic.2008.04.061