Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal−organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nan...

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Bibliographic Details
Published in:Nano letters 2006-04, Vol.6 (4), p.599-604
Main Authors: Kim, Yong, Joyce, Hannah J, Gao, Qiang, Tan, H. Hoe, Jagadish, Chennupati, Paladugu, Mohanchand, Zou, Jin, Suvorova, Alexandra A
Format: Article
Language:English
Subjects:
Arsenicals - chemistry
Arsenicals - radiation effects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Crystallization - methods
Exact sciences and technology
Gallium - chemistry
Gallium - radiation effects
Indium - chemistry
Indium - radiation effects
Light
Luminescent Measurements
Materials science
Materials Testing
Methods of deposition of films and coatings
film growth and epitaxy
Molecular Conformation
Nanoscale materials and structures: fabrication and characterization
Nanotubes - chemistry
Nanotubes - ultrastructure
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optics and Photonics
Other topics in nanoscale materials and structures
Particle Size
Physics
Quantum wires
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Summary:We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal−organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl052189o