Conductance switching in Ag(2)S devices fabricated by in situ sulfurization

We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconduct...

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Bibliographic Details
Published in:Nanotechnology 2009-03, Vol.20 (9), p.095710-095710
Main Authors: Morales-Masis, M, van der Molen, S J, Fu, W T, Hesselberth, M B, van Ruitenbeek, J M
Format: Article
Language:English
Subjects:
Crystallization - methods
Electric Conductivity
Electrochemistry - methods
Macromolecular Substances - chemistry
Materials Testing
Molecular Conformation
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - methods
Particle Size
Semiconductors
Silver Compounds - chemistry
Surface Properties
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Summary:We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.
ISSN:1361-6528
DOI:10.1088/0957-4484/20/9/095710